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LND150 N-Channel Depletion-Mode MOSFET
Ordering Information
BVDSX / BVDGX 500V RDS(ON) (max) 1.0K IDSS (min) 1.0mA Order Number / Package TO-92 LND150N3 TO-243AA* LND150N8 Die LND150ND
Product marking for TO-243AA:
LN1E
Where = 2-week alpha date code
* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
Features
ESD gate protection Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS
Advanced DMOS Technology
The LND1 is a high voltage N-channel depletion mode (normallyon) transistor utilizing Supertex's lateral DMOS technology. The gate is ESD protected. The LND1 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
Package Options Applications
Solid state relays Normally-on switches Converters Power supply circuits Constant current sources Input protection circuits
S G S D
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSX BVDGX 20V -55C to +150C 300C
TO-243AA (SOT-89)
SGD
TO-92
Note: See Package Outline section for dimensions.
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the 1 Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
LND150
Thermal Characteristics
Package TO-92 TO-243AA ID (continuous)* 30mA 30mA ID (pulsed) 30mA 30mA Power Dissipation @TA = 25C 0.74W 1.6W
C/W
125 31
jc
C/W
170 105
ja
IDR 30mA 30mA
IDRM* 30mA 30mA
* ID (continuous) is limited by max rated Tf. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25C unless otherwise specified)
Symbol BVDSX VGS(OFF) IGSS ID(OFF) Parameter Drain-to-Source Breakdown Voltage Gate-to-Source OFF Voltage Min 500 -1.0 -3.0 5.0 100 100 100 IDSS RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Saturated Drain-to-Source Current Static Drain-to-Source ON-State Resistance 1.0 850 3.0 1000 1.2 1.0 2.0 7.5 2.0 0.5 0.09 0.45 0.1 1.3 0.9 200 V ns VGS = -10V, ISD = 1.0mA VGS = -10V, ISD = 1.0mA s VDD = 25V, ID = 1.0mA, RGEN = 25 10 3.5 1.0 pF VGS = -10V, VDS = 25V f = 1 MHz Typ Max Unit V V mV/C nA nA A mA %/C m Conditions VGS = -10V, ID = 1.0mA VDS = 25V, ID = 100nA VDS = 25V, ID = 100nA VGS = 20V, VDS = 0V VGS = -10V, VDS = 450V VGS = -10V, VDS = 0.8V max rating TA =125C VGS = 0V, VDS = 25V VGS = 0V, ID = 0.5mA VGS = 0V, ID = 0.5mA VGS = 0V, ID = 1.0mA
VGS(OFF) Change in VGS(OFF) with Temperature Gate Body Leakage Current Drain-to-Source Leakage Current
RDS(ON) Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time
Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
90% 10% t(ON) td(ON) tr t(OFF) td(OFF) tF 10%
INPUT
-10V
PULSE GENERATOR Rgen
VDD
10%
INPUT
OUTPUT
0V
90%
90%
2
VDD
RL OUTPUT
D.U.T.
LND150
Typical Performance Curves
Output Characteristics
6 6
Saturation Characteristics VGS = 1.0V
5
5
VGS =1.0V
ID (milliamps)
ID (milliamps)
4
4
3
0.5V 0V -0.5V -1.0V
0 250 500
3
0.5V
2
2
0V -0.5V -1.0V
0 1 2 3 4 5
1
1
0
0
VDS (volts) Transconductance vs. Drain Current
10 2
VDS (volts) Power Dissipation vs. Ambient Temperature
VDS = 400V
8
TO-243AA TA = -55C
GFS (millisiemens)
TA = 25C
4
PD (watts)
6
1
TO-92
TA = 125C
2
0 0 2 4 6 8 10
0 0 25 50 75 100 125 150
ID (milliamps) Maximum Rated Safe Operating Area
100 1.0
TA (C) Thermal Response Characteristics
Thermal Resistance (normalized)
TO-92 (DC)
TO-92 (pulsed)
0.8
10
ID (milliamps)
TO-243AA (DC) TA = 25C
0.6
TO-243AA TA = 25C PD = 1.6W
0.4
1
0.2
0.1 1 10 100 1000
0 0.001
TO-92 P D = 1W T C = 25C
0.01 0.1 1.0 10
VDS (volts)
tP (seconds)
3
LND150
Typical Performance Curves
BVDSS Variation with Temperature
1.4
1.1
ID vs. RSOURCE ID LND1 RSOURCE
VGS = -5V
1.2
25C
BVDSS (normalized)
1.0 125C
ID (milliamps)
0.8 0.6 0.4 0.2
1.0
0.9
-50
0
50
100
150
0.0 10
100
1K
10K
100K
Tj (C) Transfer Characteristics
10
RSOURCE (ohms) VGS(OFF) and RDS Variation with Temperature
1.8 2.0
VDS = 400V
1.6
VGS(OFF) (normalized)
ID (milliamps)
TA = 25C
5
1.6
TA = 125C
1.4 1.2 1.2 0.8 1.0
VGS(OFF) @ 100nA
0.4
0
0.8 -1 0 1 2 3 -50 0 50 100 150
VGS (volts) Capacitance vs. Drain-to-Source Voltage
10 10
Tj (C) Gate Drive Dynamic Characteristics
VGS = -10V
CISS
8.7pF
5
C (picofarads)
VGS (volts)
VDS = 20V
40V
60V
5
0
COSS CRSS
0 0 10 20 30 40 -5 0 0.1 0.2 0.3
VDS (volts)
QC (nanocoulombs)
12/13/010
(c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com
RDS(ON) (normalized)
TA = -55C
RDS(ON) @ ID = 1mA

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